Germanium Oxidation

Scaling down of the planar bulk silicon (Si) metal-oxide-semiconductor (MOS) field effect transistors (FETs) has been confronted its fundamental limit associated with performance, on current, power consumption, and short-channel effects which have the trade-off relationship with each other. Therefore, device structures and materials with high carrier mobility are needed for further continues enhancement in device performance. Recently, germanium (Ge) channel has attracted much of the attention for the development of MOSFETs due to the higher carriers’ mobility than Si. However, the precise control of the Ge surface and oxide/Ge interface is the most critical issues for the development of Ge-channel MOSFETs. The quality at the interface between the Ge channel and gate dielectric degrades with increasing native oxide thickness. Understanding the native oxidation is required to provide a good passivation on Ge surfaces. GeO2 can be useful; however, the basic understanding of Ge thermal oxidation is needed. Because of the rapid progress of Germanium fabrication, the first edition of Germanium oxidation clearly needed as a revision. From the native oxidation to the thermal oxidation, the reader is presented with all the series of experiment results. In addition, many broader topics such as overview of Germanium oxidation since 1950s are presented. The chapter’s introduction provides a general discussion of the topics and subsequent section presents the detail of native and thermal oxidation of Germanium. The book is intended as revision for the postgraduates and engineers in oxidation process of Germanium; it assumes that the reader has already acquired an introductory understanding the physics and technology of semiconductor devices

The Effects of Annealing Temperature Dependence on the Doping of Titanium Dioxide (TiO2) and Reduced Graphene Oxide (rGO) for Perovskite Solar Cell Application

In the present study, reduced Graphene Oxide (rGO) was introduced to Titanium Dioxide (TiO2) as Electron Transport Layer (ETL) in Perovskite Solar Cell (PSC). TiO2 doped rGO (TiO2/rGO) was prepared by doping Titanium (IV) Oxide nanopowder as a precursor for TiO2 and chemically reduced Graphene Oxide (rGO). The TiO2/rGO was varied with different annealing temperature and the effects of electrical, structural and optical on TiO2/rGO of PSC were studied. The surface morphologies of TiO2/rGO thin films were characterized via X-Ray Diffraction (XRD). Meanwhile, Ultraviolet-visible spectroscopy (UV-Vis) was used to characterize the optical properties of TiO2/rGO thin films while current-voltage (I-V) analysis was measured by using Keithley Sourcemeter. Structural and morphological evidence from XRD results confirmed that the TiO2/rGO samples changes from anatase phase to rutile phase as the annealing temperature increased and the average crystalline size of TiO2/rGO thin films change with the TiO2 crystalline phase accordingly. The annealing temperature of 550℃ exhibits the larger grain size that results in better conductivity, higher light absorption and lower bandgap energy

Performance of CMOS Schmitt Trigger

This paper presents the effect of load capacitance and source voltage on performance of proposed Schmitt trigger circuit. The proposed circuit was designed based on Conventional Schmitt Trigger by manipulating the arrangement of transistors and the width-length ratio. All simulation results have been carried out based on Microwind software on three different designs in term of propagation delay, Energy-delay Product and hystheresis. From the result, the proposed full swing CMOS Schmitt Trigger was able to operate as low voltage (0.8V-1.5V)

A Review On Electrospun Short Fiber Production

Nanotechnology has become the interest of researchers in recent years for their unique properties of submicron scale materials. Nanotechnology also consists of nanofibers made from natural or synthetic polymers which can be electrospun into ultra-thin continuous fibers. These nanofibers are versatile as it can be found in various applications such as in filtration, affinity membranes, tissue engineering, biosensors, scaffolds, drug delivery and fiber reinforcement. Over the years, many researchers have reported various methods used to produce short electrospun fiber by means of ultrasonication, mechanical cutting, UV cutting, precipitation method, microtome cutting, cryo-microcutting, cryogenic milling, ball milling, and razor blade cutting under liquid nitrogen. The aim of this paper is to provide a review on electrospun short fiber production which elaborates more on the scission methods of the continuous as-spun fibers. The literature shows that several methods have been proposed and utilized, with varying degrees of success. Overall, it can be concluded that further research is needed to fully understand the complexities of this area and to develop a more effective approach

A Review On Electrospun Short Fiber Production

Nanotechnology has become the interest of researchers in recent years for their unique properties of submicron scale materials. Nanotechnology also consists of nanofibers made from natural or synthetic polymers which can be electrospun into ultra-thin continuous fibers. These nanofibers are versatile as it can be found in various applications such as in filtration, affinity membranes, tissue engineering, biosensors, scaffolds, drug delivery and fiber reinforcement. Over the years, many researchers have reported various methods used to produce short electrospun fiber by means of ultrasonication, mechanical cutting, UV cutting, precipitation method, microtome cutting, cryo-microcutting, cryogenic milling, ball milling, and razor blade cutting under liquid nitrogen. The aim of this paper is to provide a review on electrospun short fiber production which elaborates more on the scission methods of the continuous as-spun fibers. The literature shows that several methods have been proposed and utilized, with varying degrees of success. Overall, it can be concluded that further research is needed to fully understand the complexities of this area and to develop a more effective approach

Optical, Electrical and Structural Investigation on Different Molarities of Titanium Dioxide (TiO2) via Sol-Gel Method

Titanium dioxide (TiO2) solution having different molarities were synthesized and deposited on glass substrates by using sol-gel spin-coating method. The variation in thickness, optical, electrical and structural properties of TiO2 thin films were investigated by surface profiler (SP), UV-Vis spectroscopy, two-point probes and atomic force microscopy (AFM), respectively. The result show that the thickness of TiO2 thin film increases as the molarities increases. The optical band gap energy decreases from 3.78 eV to 3.07 eV as the TiO2 molarities increases from 0.01M to 0.20M. The maximum value of the absorption coefficient was 16.27 x 104 cm-1 at 0.20M with surface roughness of 21.45 nm. Thin films deposited with 0.01M show lower absorption coefficient (3.87 x 104 cm-1) within visible region with surface roughness of 5.21 nm. The improvement in optical and structural properties of TiO2 thin films affects the electrical properties as the highest conductivity 9.62 x 102 S/m is obtained by 0.20M

Optical, Electrical and Structural Investigation on Different Molarities of Titanium Dioxide (TiO2) via Sol-Gel Method

Titanium dioxide (TiO2) solution having different molarities were synthesized and deposited on glass substrates by using sol-gel spin-coating method. The variation in thickness, optical, electrical and structural properties of TiO2 thin films were investigated by surface profiler (SP), UV-Vis spectroscopy, two-point probes and atomic force microscopy (AFM), respectively. The result show that the thickness of TiO2 thin film increases as the molarities increases. The optical band gap energy decreases from 3.78 eV to 3.07 eV as the TiO2 molarities increases from 0.01M to 0.20M. The maximum value of the absorption coefficient was 16.27 x 104 cm-1 at 0.20M with surface roughness of 21.45 nm. Thin films deposited with 0.01M show lower absorption coefficient (3.87 x 104 cm-1) within visible region with surface roughness of 5.21 nm. The improvement in optical and structural properties of TiO2 thin films affects the electrical properties as the highest conductivity 9.62 x 102 S/m is obtained by 0.20M